EPC · FETs & Power MOSFETs · MPN EPC2019
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| Gate Charge(Qg) | 1.8nC |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 8.5A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| RDS(on) | 36mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 200pF |
200V 8.5A 1.4V 36mΩ 1 N-channel N-Channel SMD Single FETs, MOSFETs RoHS