EPC EPC2019

EPC · FETs & Power MOSFETs · MPN EPC2019

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Specifications

Gate Charge(Qg)1.8nC
Drain to Source Voltage200V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)8.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
TechnologyE-mode
Pd - Power Dissipation-
RDS(on)36mΩ
Reverse Transfer Capacitance (Crss@Vds)0.7pF
Number1 N-channel
Input Capacitance(Ciss)200pF

Technical details

200V 8.5A 1.4V 36mΩ 1 N-channel N-Channel SMD Single FETs, MOSFETs RoHS

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