EPC · FETs & Power MOSFETs · MPN EPC2016C
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 3.4nC |
| Current - Continuous Drain(Id) | 18A |
| Output Capacitance(Coss) | 210pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| RDS(on) | 12mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 360pF |
100V 18A 1.4V 12mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS