EPC EPC2016C

EPC · FETs & Power MOSFETs · MPN EPC2016C

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)3.4nC
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)210pF
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
TechnologyE-mode
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)3.2pF
RDS(on)12mΩ
Number1 N-channel
Input Capacitance(Ciss)360pF

Technical details

100V 18A 1.4V 12mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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