EPC EPC2012C

EPC · FETs & Power MOSFETs · MPN EPC2012C

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Specifications

Gate Charge(Qg)1nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)64pF
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
TechnologyE-mode
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)0.4pF
RDS(on)70mΩ
Number1 N-channel
Input Capacitance(Ciss)100pF

Technical details

200V 5A 1.4V 70mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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