EPC · FETs & Power MOSFETs · MPN EPC2012C
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| Gate Charge(Qg) | 1nC |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 64pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF |
| RDS(on) | 70mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 100pF |
200V 5A 1.4V 70mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS