EPC EPC2010C

EPC · FETs & Power MOSFETs · MPN EPC2010C

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Specifications

Gate Charge(Qg)3.7nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)22A
Output Capacitance(Coss)240pF
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
TechnologyE-mode
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)18mΩ
Number-
Input Capacitance(Ciss)380pF

Technical details

200V 22A 1.4V 18mΩ SON-7(1.6x3.5) Single FETs, MOSFETs RoHS

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