EPC · FETs & Power MOSFETs · MPN EPC2010C
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| Gate Charge(Qg) | 3.7nC |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 22A |
| Output Capacitance(Coss) | 240pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| RDS(on) | 18mΩ |
| Number | - |
| Input Capacitance(Ciss) | 380pF |
200V 22A 1.4V 18mΩ SON-7(1.6x3.5) Single FETs, MOSFETs RoHS