EPC EPC2001C

EPC · FETs & Power MOSFETs · MPN EPC2001C

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Specifications

Gate Charge(Qg)7.5nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)36A
Output Capacitance(Coss)430pF
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
TechnologyE-mode
Pd - Power Dissipation-
RDS(on)5.6mΩ
Reverse Transfer Capacitance (Crss@Vds)10pF
Number-
Input Capacitance(Ciss)770pF

Technical details

100V 36A 1.4V 5.6mΩ Die-11(1.6x4.1) Single FETs, MOSFETs RoHS

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