ElecSuper WST2011-ES

ElecSuper · FETs & Power MOSFETs · MPN WST2011-ES

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Specifications

Gate Charge(Qg)2.2nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation800mW
RDS(on)82mΩ@4.5V;118mΩ@2.5V;180mΩ@1.8V
Reverse Transfer Capacitance (Crss@Vds)25pF
Input Capacitance(Ciss)185pF
TypeP-Channel

Technical details

P-Channel 20V 2A 800mW Surface Mount SOT23-6L

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