ElecSuper SIS412DN-T1-GE3-ES

ElecSuper · FETs & Power MOSFETs · MPN SIS412DN-T1-GE3-ES

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5.2nC@10V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)24.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation20.8W
RDS(on)16mΩ@10V;24mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)512pF
TypeN-Channel

Technical details

N-Channel 30V 24.1A 20.8W Surface Mount PDFN3x3-8L

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