ElecSuper SI4101DY-T1-GE3(ES)

ElecSuper · FETs & Power MOSFETs · MPN SI4101DY-T1-GE3(ES)

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)323pF
Current - Continuous Drain(Id)12.4A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)267pF
RDS(on)14mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.76nF
TypeP-Channel

Technical details

P-Channel 30V 12.4A 3W Surface Mount SOP-8

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