ElecSuper SI2319DS-T1-GE3(ES)

ElecSuper · FETs & Power MOSFETs · MPN SI2319DS-T1-GE3(ES)

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)27pF
Current - Continuous Drain(Id)2.3A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.2W
RDS(on)110mΩ@10V;150mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)21pF
Input Capacitance(Ciss)230pF
TypeP-Channel

Technical details

P-Channel 40V 2.3A 1.2W Surface Mount SOT-23

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