ElecSuper ESP10N10C

ElecSuper · FETs & Power MOSFETs · MPN ESP10N10C

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Specifications

Drain to Source Voltage100V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)4.5A
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)120mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

N-Channel 100V 4.5A 3.1W Surface Mount SOP-8

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