ElecSuper ESP10N10

ElecSuper · FETs & Power MOSFETs · MPN ESP10N10

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Specifications

Gate Charge(Qg)4.2nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)29pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.65V
Pd - Power Dissipation13.7W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)90mΩ@10V;120mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)206pF
TypeN-Channel

Technical details

N-Channel 100V 7A 13.7W Surface Mount SOP8

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