ElecSuper ESNQ06R33

ElecSuper · FETs & Power MOSFETs · MPN ESNQ06R33

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation25W
RDS(on)26mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Input Capacitance(Ciss)1.15nF

Technical details

60V 20A 1.6V 25W 26mΩ@10V TO-252 Single FETs, MOSFETs RoHS

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