ElecSuper ESN6484

ElecSuper · FETs & Power MOSFETs · MPN ESN6484

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Specifications

Gate Charge(Qg)19.2nC@4.5V
Drain to Source Voltage100V
Output Capacitance(Coss)58pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)91mΩ@10V;97mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)780pF
TypeN-Channel

Technical details

N-Channel 100V 11A 25W Surface Mount PDFN5x6-8L

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