ElecSuper ESN4485

ElecSuper · FETs & Power MOSFETs · MPN ESN4485

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation18W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)13mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.5nF
TypeP-Channel

Technical details

P-Channel 40V 34A 18W Surface Mount PDFN3x3-8L

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