ElecSuper ESBSS138WT1G

ElecSuper · FETs & Power MOSFETs · MPN ESBSS138WT1G

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)1.6nC@4.5V
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)15pF

Technical details

60V 0.3A 350mW Surface Mount SOT-323

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