ElecSuper ESBSS123LT1G

ElecSuper · FETs & Power MOSFETs · MPN ESBSS123LT1G

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Specifications

Drain to Source Voltage100V
Output Capacitance(Coss)2.8pF
Current - Continuous Drain(Id)290mA
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation350mW
RDS(on)2.7Ω@10V;2.95Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)29pF
TypeN-Channel

Technical details

100V 0.29A 0.35W Surface Mount SOT-23

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