ElecSuper DMG1012T-ES

ElecSuper · FETs & Power MOSFETs · MPN DMG1012T-ES

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Specifications

Gate Charge(Qg)1nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)1.2A
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation230mW
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)150mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)60pF
TypeN-Channel

Technical details

N-Channel 20V 1.2A 230mW Surface Mount SOT-523

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