DOINGTER ZH020T2G-L

DOINGTER · FETs & Power MOSFETs · MPN ZH020T2G-L

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)291pF
Current - Continuous Drain(Id)30A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation25W
RDS(on)14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)950pF
TypeN-Channel

Technical details

100V 30A 1.7V 25W 14mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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