DOINGTER ZH012T2G-L

DOINGTER · FETs & Power MOSFETs · MPN ZH012T2G-L

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)798pF
Current - Continuous Drain(Id)45A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

100V 45A 1.7V 62.5W 9mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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