DOINGTER ZE016TCG

DOINGTER · FETs & Power MOSFETs · MPN ZE016TCG

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)14nC@10V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)268pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation37.8W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

60V 35A 1.3V 37.8W 11mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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