DOINGTER ZC4R5NDG

DOINGTER · FETs & Power MOSFETs · MPN ZC4R5NDG

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)207pF
Current - Continuous Drain(Id)55A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.55V@250uA
Pd - Power Dissipation25W
RDS(on)3.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)187pF
Number1 N-channel
Input Capacitance(Ciss)2.098nF
TypeN-Channel

Technical details

30V 55A 1.55V@250uA 25W 3.6mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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