DOINGTER ZB008PG-B

DOINGTER · FETs & Power MOSFETs · MPN ZB008PG-B

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)56.7nC@10V
Output Capacitance(Coss)308pF
Current - Continuous Drain(Id)40A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation42W
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)270pF
Number1 P-Channel
Input Capacitance(Ciss)2.697nF
TypeP-Channel

Technical details

20V 40A 700mV 42W 6mΩ@10V 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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