DOINGTER ZB006PG-B

DOINGTER · FETs & Power MOSFETs · MPN ZB006PG-B

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)504pF
Current - Continuous Drain(Id)55A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation48W
RDS(on)5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)439pF
Number1 P-Channel
Input Capacitance(Ciss)4.589nF
TypeP-Channel

Technical details

20V 55A 700mV 48W 5mΩ@4.5V 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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