DOINGTER ZB006DNG

DOINGTER · FETs & Power MOSFETs · MPN ZB006DNG

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)25nC@4.5V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)50A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV@250uA
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)265pF
RDS(on)4.8mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.82nF
TypeN-Channel

Technical details

20V 50A 700mV@250uA 29W 4.8mΩ@4.5V 2 N-Channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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