DOINGTER ZB003NG

DOINGTER · FETs & Power MOSFETs · MPN ZB003NG

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)52nC@4.5V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)890pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)860pF
RDS(on)2.3Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.372nF
TypeN-Channel

Technical details

20V 100A 700mV 30W 2.3Ω@4.5V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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