DOINGTER · FETs & Power MOSFETs · MPN YC1R9TG-PL
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| Output Capacitance(Coss) | 1.406nF |
|---|---|
| Pd - Power Dissipation | 250W |
| Configuration | - |
| Gate Charge(Qg) | 36nC |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| RDS(on) | 1.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.35nF |
250W 30V 1.6V 1.5mΩ@10V 1 N-channel N-Channel TDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS