DOINGTER WD016NG

DOINGTER · FETs & Power MOSFETs · MPN WD016NG

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)16A
Output Capacitance(Coss)109pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V@250uA
Pd - Power Dissipation2.4W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.113nF
TypeN-Channel

Technical details

40V 16A 1.3V@250uA 2.4W 12mΩ@10V 1 N-channel N-Channel SOT-89 Single FETs, MOSFETs RoHS

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