DOINGTER WC007NG

DOINGTER · FETs & Power MOSFETs · MPN WC007NG

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)34nC@10V
Output Capacitance(Coss)244pF
Current - Continuous Drain(Id)18A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V@250uA
Pd - Power Dissipation17W
RDS(on)5.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)214pF
Number1 N-channel
Input Capacitance(Ciss)1.613nF
TypeN-Channel

Technical details

30V 18A 1.5V@250uA 17W 5.1mΩ@10V 1 N-channel N-Channel SOT-89 Single FETs, MOSFETs RoHS

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