DOINGTER UH170PG-C

DOINGTER · FETs & Power MOSFETs · MPN UH170PG-C

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)220pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)189pF
RDS(on)140mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.577nF
TypeP-Channel

Technical details

100V 10A 1.9V 34W 140mΩ@10V 1 P-Channel P-Channel TO-251 Single FETs, MOSFETs RoHS

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