DOINGTER SQD40P10-40L_GE3-DO

DOINGTER · FETs & Power MOSFETs · MPN SQD40P10-40L_GE3-DO

No reviews yet — be the first to review DOINGTER SQD40P10-40L_GE3-DO.

Specifications

Configuration-
Gate Charge(Qg)146nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)40A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)40mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)8.055nF

Technical details

P-Channel 100V 40A 107W Surface Mount TO-252

Related FETs & Power MOSFETs