DOINGTER RC012NG

DOINGTER · FETs & Power MOSFETs · MPN RC012NG

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Specifications

Gate Charge(Qg)17.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)111pF
Current - Continuous Drain(Id)12A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V@250uA
Pd - Power Dissipation2.6W
Reverse Transfer Capacitance (Crss@Vds)86pF
RDS(on)9.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)810pF
TypeN-Channel

Technical details

30V 12A 1.7V@250uA 2.6W 9.2mΩ@10V 1 N-channel N-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS

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