DOINGTER PS008NG-B

DOINGTER · FETs & Power MOSFETs · MPN PS008NG-B

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Specifications

Gate Charge(Qg)98nC@10V
Drain to Source Voltage68V
Output Capacitance(Coss)262pF
Current - Continuous Drain(Id)80A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation72W
Reverse Transfer Capacitance (Crss@Vds)208pF
RDS(on)6.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.389nF
TypeN-Channel

Technical details

68V 80A 3.1V 72W 6.6mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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