DOINGTER PE012NG-H

DOINGTER · FETs & Power MOSFETs · MPN PE012NG-H

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)16nC@10V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)55A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)151pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.045nF
TypeN-Channel

Technical details

60V 55A 3V 96W 9mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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