DOINGTER PD007NG

DOINGTER · FETs & Power MOSFETs · MPN PD007NG

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)750pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.01nF
TypeN-Channel

Technical details

40V 80A 1.8V 90W 5.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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