DOINGTER PB004NG

DOINGTER · FETs & Power MOSFETs · MPN PB004NG

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)42nC@10V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)383pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation60W
RDS(on)3.2mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)295pF
Number1 N-channel
Input Capacitance(Ciss)3.28nF
TypeN-Channel

Technical details

25V 100A 700mV 60W 3.2mΩ@4.5V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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