DOINGTER P2003ND5G-DO

DOINGTER · FETs & Power MOSFETs · MPN P2003ND5G-DO

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Specifications

ConfigurationCommon Drain
Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
RDS(on)13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)95pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)660pF

Technical details

N-Channel+P-Channel Array 30V 25A 30W Surface Mount TO-252-4

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