DOINGTER · FETs & Power MOSFETs · MPN NTD5867NLT4G-DO
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 20.3nC@10V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 31W |
| RDS(on) | 26mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
| Type | N-Channel |
N-Channel 60V 20A 31W Surface Mount TO-236