DOINGTER · FETs & Power MOSFETs · MPN NTD5807NT4G-DO
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| Gate Charge(Qg) | 3.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 25A |
| Output Capacitance(Coss) | 70pF |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 26W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 500pF |
| Type | N-Channel |
N-Channel 40V 25A 26W Surface Mount TO-252