DOINGTER NTD20P06LT4G-DO

DOINGTER · FETs & Power MOSFETs · MPN NTD20P06LT4G-DO

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)82.32nC@10V
Output Capacitance(Coss)725pF
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)560pF
RDS(on)68mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.961nF
TypeP-Channel

Technical details

P-Channel 60V 20A 50W Surface Mount TO-252

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