DOINGTER · FETs & Power MOSFETs · MPN NH4R5T2G
No reviews yet — be the first to review DOINGTER NH4R5T2G.
| Output Capacitance(Coss) | 1.85nF |
|---|---|
| Pd - Power Dissipation | 156W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 60nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| RDS(on) | 3.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.562nF |
156W 100V 1.9V 3.6mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS