DOINGTER NH180PG-C

DOINGTER · FETs & Power MOSFETs · MPN NH180PG-C

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Specifications

Gate Charge(Qg)28.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)78pF
Current - Continuous Drain(Id)15A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation58W
RDS(on)142mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 P-Channel
Input Capacitance(Ciss)1.675nF
TypeP-Channel

Technical details

100V 15A 1.7V 58W 142mΩ@4.5V 1 P-Channel P-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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