DOINGTER · FETs & Power MOSFETs · MPN NH100PG-C
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 119pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.077nF |
| Type | P-Channel |
100V 20A 1.9V 62.5W 80mΩ@10V 1 P-Channel P-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS