DOINGTER NH012T2G-L

DOINGTER · FETs & Power MOSFETs · MPN NH012T2G-L

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Specifications

Output Capacitance(Coss)882pF
Pd - Power Dissipation78W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)26nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)8.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

78W 100V 1.7V 8.8mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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