DOINGTER NE020NDG

DOINGTER · FETs & Power MOSFETs · MPN NE020NDG

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)27nC@10V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)40A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)93pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.45nF
TypeN-Channel

Technical details

60V 40A 1.6V 31W 13mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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