DOINGTER NE016TCG

DOINGTER · FETs & Power MOSFETs · MPN NE016TCG

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Specifications

Output Capacitance(Coss)268pF
Pd - Power Dissipation41W
Gate Charge(Qg)14nC
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

41W 60V 1.3V 11mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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