DOINGTER NE015TPG

DOINGTER · FETs & Power MOSFETs · MPN NE015TPG

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Specifications

Output Capacitance(Coss)459pF
Pd - Power Dissipation100W
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)39.9nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Reverse Transfer Capacitance (Crss@Vds)9.87pF
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.498nF

Technical details

100W 60V 1.8V 11mΩ@10V 1 P-Channel P-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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