DOINGTER NE013NG

DOINGTER · FETs & Power MOSFETs · MPN NE013NG

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)47nC@10V
Output Capacitance(Coss)199pF
Current - Continuous Drain(Id)50A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation42W
RDS(on)12mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)128pF
Number1 N-channel
Input Capacitance(Ciss)1.928nF
TypeN-Channel

Technical details

60V 50A 1.5V 42W 12mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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