DOINGTER NE006NG

DOINGTER · FETs & Power MOSFETs · MPN NE006NG

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)90nC@10V
Output Capacitance(Coss)309pF
Current - Continuous Drain(Id)70A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation84W
RDS(on)4.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)252pF
Number1 N-channel
Input Capacitance(Ciss)4nF
TypeN-Channel

Technical details

60V 70A 2.7V 84W 4.6mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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