DOINGTER NC006DNG-B

DOINGTER · FETs & Power MOSFETs · MPN NC006DNG-B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)33.7nC@10V
Output Capacitance(Coss)245pF
Current - Continuous Drain(Id)50A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.55V
Pd - Power Dissipation36W
RDS(on)4.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)215pF
Number2 N-Channel
Input Capacitance(Ciss)1.614nF
TypeN-Channel

Technical details

30V 50A 1.55V 36W 4.8mΩ@10V 2 N-Channel N-Channel DFN-8D(5x6) Single FETs, MOSFETs RoHS

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