DOINGTER NB3R2PG

DOINGTER · FETs & Power MOSFETs · MPN NB3R2PG

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)100nC@4.5V
Output Capacitance(Coss)399pF
Current - Continuous Drain(Id)110A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV@250uA
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)304pF
RDS(on)2.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5nF
TypeP-Channel

Technical details

20V 110A 600mV@250uA 130W 2.5mΩ@4.5V 1 P-Channel P-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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